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| Advance Product Information November 2, 2004 30-38 GHz Balanced Low Noise Amplifier Key Features * * * * * * TGA4511-EPU 0.15 um pHEMT Technology 15 dBm Nominal Pout @ 35 GHz 17 dB Nominal Gain @ 35 GHz 2.5 dB Noise Figure @ 35 GHz Bias Conditions: 3.5V, 110 mA Chip Dimensions: 2.7mm x 1.8mm Preliminary Measured Data Bias Conditions: Vd = 3.5 V, Id = 110 mA 5 4 3 2 1 0 26 28 30 32 34 36 38 40 Frequency (GHz) Primary Applications * * Point-to-Point Radio Point-to-Multipoint Radio Noise Figure (dB) 22 20 Gain (dB) 18 16 14 12 10 26 28 30 32 34 36 38 40 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information November 2, 2004 TABLE I MAXIMUM RATINGS 5/ SYMBOL V + - PARAMETER Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature VALUE 6V -2 to 0 V 400 mA 40 mA TBD TBD 150 C 320 C -65 to 150 C 0 0 0 NOTES 4/ V I + 4/ | IG | PIN PD T CH TM TSTG 3/ 4/ 1/ 2/ 1/ 2/ These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. When operated at this bias condition with a base plate temperature of TBD, the median life is reduced from TBD to TBD. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. These ratings represent the maximum operable values for this device. 3/ 4/ 5/ TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25oC 5oC) PARAMETER Drain Operating Quiescent Current Small Signal Gain Input Return Loss (Linear Small Signal) Output Return Loss (Linear Small Signal Output Power @ 1 dB Compression Gain Third Order Intercept Point @ -12 dBm @ 35GHz TYPICAL 3.5 110 17 18 18 15 25 UNITS V mA dB dB dB dBm dBm Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 Advance Product Information November 2, 2004 TGA4511-EPU Preliminary Measured Data Bias Conditions: Vd = 3.5 V, Id = 110 mA 5.0 4.5 4.0 3.5 Noise Figure (dB) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 26 28 30 32 34 36 38 40 Frequency (GHz) 22 21 20 19 18 Gain (dB) 17 16 15 14 13 12 11 10 26 28 30 32 34 36 38 40 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 Advance Product Information November 2, 2004 TGA4511-EPU Preliminary Measured Data Bias Conditions: Vd = 3.5 V, Id = 110 mA 0 -5 Input Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 26 28 30 32 34 36 38 40 Frequency (GHz) 0 -5 Output Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 26 28 30 32 34 36 38 40 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Advance Product Information November 2, 2004 Preliminary Measured Data Bias Conditions: Vd = 3.5 V, Id = 110 mA 20 18 TGA4511-EPU Pout @ P1dB (dBm) 16 14 12 10 8 6 4 2 0 30 31 32 33 34 35 36 37 38 Frequency (GHz) TOI at -12 dBm Input Power (P1dB - 10 dB) 29 Third Order Intercept Point (dBm) 27 25 23 21 19 17 15 33 35 37 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5 Advance Product Information November 2, 2004 TGA4511-EPU Mechanical Drawing Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6 Advance Product Information November 2, 2004 TGA4511-EPU Chip Assembly Diagram Vg Vd RF IN RF OUT Vg Vd GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 7 Advance Product Information November 2, 2004 TGA4511-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C. An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 8 |
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